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IGBT (Insulated Gate Bipolar Transistor) is a power semiconductor device that integrates the advantages of MOSFET and BJT. It combines the voltage control of MOSFET, high input impedance, and the low conduction voltage drop and high current capability of BJT, making it one of the most core switching devices in the field of power electronics.
| Код для заказа | Фото | Корпус | Uкэ макс | Iк | Uкэ нас | Мощность | Заряд затвора | Вход | Тип |
|---|---|---|---|---|---|---|---|---|---|
| CGR100N120F2KAD (JSCJ) | TO-247PLUS | 1200 В | 160 А | 1179 В | 3660 Вт | 4287.7 нКл | стандартный | Тренч | |
| CGWT40N65F2KAD (JSCJ) | TO-247-3 | – | – | – | – | – | – | – | |
| CGWT80N65F2KAD (JSCJ) | TO-247-3 | – | – | – | – | – | – | – | |
| CGR140N120F3KAD (JSCJ) | TO-247PLUS | 1200 В | 170 А | 1185 В | 4800 Вт | 910.3 нКл | Стандартный | Тренч |